Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength towards Dioxin, PCB Decomposition Technology — LED professional - LED Lighting Technology, Application Magazine
GaN/AlN quantum-disk nanorod 280 nm deep ultraviolet light emitting diodes by molecular beam epitaxy
13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications - Journal of Materials Chemistry C (RSC Publishing) DOI:10.1039/C8TC03825B
Aluminum Nitride Light Emitting Diodes with the Shortest Wavelength|NTT Basic Research Laboratories | NTT R&D Website
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports
Semiconductor Today
Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer | Scientific Reports
229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection: Applied Physics Letters: Vol 112, No 8
Nanomaterials | Free Full-Text | Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes | HTML
Understanding high efficiency of deep ultraviolet LEDs | Asia Research News
UVC LEDs on Bulk AlN Substrates Using Silicon Nanomembranes for Efficient Hole Injection
Asahi Kasei and Nara Medical University Confirm 226 nm UVC LED Efficacy Against SARS-CoV-2 and Verify Reduced Effect on Animal Skin Cells - LEDinside
Using Aluminum Nitride (AlN) to Access UVC Wavelengths - Klaran
UV LED fabrication process illustration. (a) Begin with a finished... | Download Scientific Diagram
Aluminum Nitride LED Produces 210-nm Radiation | Features | Jul 2006 | Photonics Spectra